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IPB60R060C7ATMA1

IPB60R060C7ATMA1

For Reference Only

Part Number IPB60R060C7ATMA1
PNEDA Part # IPB60R060C7ATMA1
Description MOSFET N-CH 650V 35A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB60R060C7ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB60R060C7ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB60R060C7ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2850pF @ 400V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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