SI5463EDC-T1-GE3
For Reference Only
| Part Number | SI5463EDC-T1-GE3 |
| PNEDA Part # | SI5463EDC-T1-GE3 |
| Description | MOSFET P-CH 20V 3.8A 1206-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI5463EDC-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI5463EDC-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI5463EDC-T1-GE3 Datasheet
- where to find SI5463EDC-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI5463EDC-T1-GE3
- SI5463EDC-T1-GE3 PDF Datasheet
- SI5463EDC-T1-GE3 Stock
- SI5463EDC-T1-GE3 Pinout
- Datasheet SI5463EDC-T1-GE3
- SI5463EDC-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI5463EDC-T1-GE3 Price
- SI5463EDC-T1-GE3 Distributor
SI5463EDC-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.4mOhm @ 19.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V FET Feature - Power Dissipation (Max) 3.7W (Ta), 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 85A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 43A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 10V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-LDPAK Package / Case SC-83 |
Manufacturer Micro Commercial Co Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 138A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK4 (5x6) Package / Case SOT-1023, 4-LFPAK |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V FET Feature - Power Dissipation (Max) 48.4W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
