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SI5463EDC-T1-GE3

SI5463EDC-T1-GE3

For Reference Only

Part Number SI5463EDC-T1-GE3
PNEDA Part # SI5463EDC-T1-GE3
Description MOSFET P-CH 20V 3.8A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5463EDC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5463EDC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5463EDC-T1-GE3, SI5463EDC-T1-GE3 Datasheet (Total Pages: 6, Size: 95.63 KB)
PDFSI5463EDC-T1-GE3 Datasheet Cover
SI5463EDC-T1-GE3 Datasheet Page 2 SI5463EDC-T1-GE3 Datasheet Page 3 SI5463EDC-T1-GE3 Datasheet Page 4 SI5463EDC-T1-GE3 Datasheet Page 5 SI5463EDC-T1-GE3 Datasheet Page 6

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SI5463EDC-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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