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MTP10N10ELG

MTP10N10ELG

For Reference Only

Part Number MTP10N10ELG
PNEDA Part # MTP10N10ELG
Description MOSFET N-CH 100V 10A TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MTP10N10ELG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMTP10N10ELG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MTP10N10ELG, MTP10N10ELG Datasheet (Total Pages: 8, Size: 102.91 KB)
PDFMTP10N10ELG Datasheet Cover
MTP10N10ELG Datasheet Page 2 MTP10N10ELG Datasheet Page 3 MTP10N10ELG Datasheet Page 4 MTP10N10ELG Datasheet Page 5 MTP10N10ELG Datasheet Page 6 MTP10N10ELG Datasheet Page 7 MTP10N10ELG Datasheet Page 8

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MTP10N10ELG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs220mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 25V
FET Feature-
Power Dissipation (Max)1.75W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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