Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HUF75925D3ST

HUF75925D3ST

For Reference Only

Part Number HUF75925D3ST
PNEDA Part # HUF75925D3ST
Description MOSFET N-CH 200V 11A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75925D3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75925D3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75925D3ST, HUF75925D3ST Datasheet (Total Pages: 10, Size: 263.8 KB)
PDFHUF75925D3ST Datasheet Cover
HUF75925D3ST Datasheet Page 2 HUF75925D3ST Datasheet Page 3 HUF75925D3ST Datasheet Page 4 HUF75925D3ST Datasheet Page 5 HUF75925D3ST Datasheet Page 6 HUF75925D3ST Datasheet Page 7 HUF75925D3ST Datasheet Page 8 HUF75925D3ST Datasheet Page 9 HUF75925D3ST Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HUF75925D3ST Datasheet
  • where to find HUF75925D3ST
  • ON Semiconductor

  • ON Semiconductor HUF75925D3ST
  • HUF75925D3ST PDF Datasheet
  • HUF75925D3ST Stock

  • HUF75925D3ST Pinout
  • Datasheet HUF75925D3ST
  • HUF75925D3ST Supplier

  • ON Semiconductor Distributor
  • HUF75925D3ST Price
  • HUF75925D3ST Distributor

HUF75925D3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs275mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NVMFS5C645NLWFAFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

BSC017N04NSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

108nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

DMP21D5UFD-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

1Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

800nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

46.1pF @ 10V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X1-DFN1212-3

Package / Case

3-UDFN

JANTX2N6770T1

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/543

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

STI360N4F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

340nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17930pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

PIC12F1822-I/SN

PIC12F1822-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC

EA DOGS102B-6

EA DOGS102B-6

Display Visions

LCD MOD GRAPH 102X64 BLUE

MAX3045BESE+

MAX3045BESE+

Maxim Integrated

IC DRIVER 4/0 16SO

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

MMBD7000LT1G

MMBD7000LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP

XCF32PVOG48C

XCF32PVOG48C

Xilinx

IC PROM SRL/PAR 1.8V 32M 48TSOP

PBSS4250X,115

PBSS4250X,115

Nexperia

TRANS NPN 50V 2A SOT89

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

0217.500MXP

0217.500MXP

Littelfuse

FUSE GLASS 500MA 250VAC 5X20MM