STI360N4F6
For Reference Only
| Part Number | STI360N4F6 |
| PNEDA Part # | STI360N4F6 |
| Description | MOSFET N-CH 40V 120A I2PAK |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 5,868 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 21 - Apr 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
STI360N4F6 Resources
| Brand | STMicroelectronics |
| ECAD Module |
|
| Mfr. Part Number | STI360N4F6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- STI360N4F6 Datasheet
- where to find STI360N4F6
- STMicroelectronics
- STMicroelectronics STI360N4F6
- STI360N4F6 PDF Datasheet
- STI360N4F6 Stock
- STI360N4F6 Pinout
- Datasheet STI360N4F6
- STI360N4F6 Supplier
- STMicroelectronics Distributor
- STI360N4F6 Price
- STI360N4F6 Distributor
STI360N4F6 Specifications
| Manufacturer | STMicroelectronics |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 340nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 17930pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
The Products You May Be Interested In
|
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 63A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 53.4nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 5657pF @ 25V FET Feature - Power Dissipation (Max) 203W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V FET Feature - Power Dissipation (Max) 950mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT6 (SC-95) Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Infineon Technologies Series OptiMOS™-5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.1V @ 270µA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 298pF @ 15V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer STMicroelectronics Series STripFET™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±22V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (3.3x3.3) Package / Case 8-PowerVDFN |
