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IXBX64N250

IXBX64N250

For Reference Only

Part Number IXBX64N250
PNEDA Part # IXBX64N250
Description IGBT 2500V
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBX64N250 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBX64N250
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBX64N250, IXBX64N250 Datasheet (Total Pages: 6, Size: 192.72 KB)
PDFIXBX64N250 Datasheet Cover
IXBX64N250 Datasheet Page 2 IXBX64N250 Datasheet Page 3 IXBX64N250 Datasheet Page 4 IXBX64N250 Datasheet Page 5 IXBX64N250 Datasheet Page 6

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IXBX64N250 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)156A
Current - Collector Pulsed (Icm)600A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 64A
Power - Max735W
Switching Energy-
Input TypeStandard
Gate Charge400nC
Td (on/off) @ 25°C49ns/232ns
Test Condition1250V, 128A, 1Ohm, 15V
Reverse Recovery Time (trr)160ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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STMicroelectronics

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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