HGTP7N60C3D Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A Power - Max 60W Switching Energy 165µJ (on), 600µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C - Test Condition 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A Power - Max 60W Switching Energy 165µJ (on), 600µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C - Test Condition 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr) 37ns Operating Temperature - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A Power - Max 60W Switching Energy 165µJ (on), 600µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C - Test Condition 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr) 37ns Operating Temperature - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |