IXXK110N65B4H1
For Reference Only
| Part Number | IXXK110N65B4H1 |
| PNEDA Part # | IXXK110N65B4H1 |
| Description | IGBT 650V 240A 880W TO264 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 8,028 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 1 - Apr 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXXK110N65B4H1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXXK110N65B4H1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXXK110N65B4H1 Specifications
| Manufacturer | IXYS |
| Series | GenX4™, XPT™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 240A |
| Current - Collector Pulsed (Icm) | 630A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Power - Max | 880W |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Input Type | Standard |
| Gate Charge | 183nC |
| Td (on/off) @ 25°C | 38ns/156ns |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Reverse Recovery Time (trr) | 100ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 (IXXK) |
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Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 112A Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A Power - Max 250W Switching Energy 1.15mJ Input Type Standard Gate Charge 141nC Td (on/off) @ 25°C 20ns/250ns Test Condition 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package PG-TO220-3 |
Manufacturer IXYS Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A Power - Max 190W Switching Energy 2.1mJ (off) Input Type Standard Gate Charge 72nC Td (on/off) @ 25°C 25ns/150ns Test Condition 960V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 40ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer IXYS Series GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A Power - Max 300W Switching Energy 3.47mJ (on), 2.16mJ (off) Input Type Standard Gate Charge 87nC Td (on/off) @ 25°C 16ns/127ns Test Condition 960V, 30A, 5Ohm, 15V Reverse Recovery Time (trr) 100ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A Power - Max 180W Switching Energy 1.06mJ (on), 620µJ (off) Input Type Standard Gate Charge 85nC Td (on/off) @ 25°C 30ns/160ns Test Condition 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 105ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
