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IXSH30N60C

IXSH30N60C

For Reference Only

Part Number IXSH30N60C
PNEDA Part # IXSH30N60C
Description IGBT 600V 55A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSH30N60C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSH30N60C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSH30N60C, IXSH30N60C Datasheet (Total Pages: 4, Size: 131.51 KB)
PDFIXST30N60B Datasheet Cover
IXST30N60B Datasheet Page 2 IXST30N60B Datasheet Page 3 IXST30N60B Datasheet Page 4

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IXSH30N60C Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)55A
Current - Collector Pulsed (Icm)110A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max200W
Switching Energy700µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C30ns/90ns
Test Condition480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXSH)

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1400V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 28A

Power - Max

300W

Switching Energy

3.6mJ (on), 3.9mJ (off)

Input Type

Standard

Gate Charge

88nC

Td (on/off) @ 25°C

16ns/190ns

Test Condition

960V, 28A, 5Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

500A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 90A

Power - Max

660W

Switching Energy

1.32mJ (on), 1.37mJ (off)

Input Type

Standard

Gate Charge

172nC

Td (on/off) @ 25°C

31ns/150ns

Test Condition

480V, 60A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 24A

Power - Max

190W

Switching Energy

320µJ (off)

Input Type

Standard

Gate Charge

66nC

Td (on/off) @ 25°C

13ns/110ns

Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IXGM30N60

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

200W

Switching Energy

-

Input Type

Standard

Gate Charge

180nC

Td (on/off) @ 25°C

100ns/500ns

Test Condition

-

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-204AE

APT30GN60BG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

63A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Power - Max

203W

Switching Energy

525µJ (on), 700µJ (off)

Input Type

Standard

Gate Charge

165nC

Td (on/off) @ 25°C

12ns/155ns

Test Condition

400V, 30A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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