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FDS4435BZ

FDS4435BZ FDS4435BZ

For Reference Only

Part Number FDS4435BZ
PNEDA Part # FDS4435BZ
Description MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 122,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS4435BZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS4435BZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS4435BZ, FDS4435BZ Datasheet (Total Pages: 7, Size: 388.61 KB)
PDFFDS4435BZ Datasheet Cover
FDS4435BZ Datasheet Page 2 FDS4435BZ Datasheet Page 3 FDS4435BZ Datasheet Page 4 FDS4435BZ Datasheet Page 5 FDS4435BZ Datasheet Page 6 FDS4435BZ Datasheet Page 7

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FDS4435BZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1845pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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