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AUIRGP50B60PD1E

AUIRGP50B60PD1E

For Reference Only

Part Number AUIRGP50B60PD1E
PNEDA Part # AUIRGP50B60PD1E
Description IGBT 600V 75A 390W TO247AD
Manufacturer Infineon Technologies
Unit Price
1 ---------- $72.7186
50 ---------- $69.3099
100 ---------- $65.9012
200 ---------- $62.4925
400 ---------- $59.6520
500 ---------- $56.8114
In Stock 20,494
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRGP50B60PD1E Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRGP50B60PD1E
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
AUIRGP50B60PD1E, AUIRGP50B60PD1E Datasheet (Total Pages: 12, Size: 565.47 KB)
PDFAUIRGP50B60PD1E Datasheet Cover
AUIRGP50B60PD1E Datasheet Page 2 AUIRGP50B60PD1E Datasheet Page 3 AUIRGP50B60PD1E Datasheet Page 4 AUIRGP50B60PD1E Datasheet Page 5 AUIRGP50B60PD1E Datasheet Page 6 AUIRGP50B60PD1E Datasheet Page 7 AUIRGP50B60PD1E Datasheet Page 8 AUIRGP50B60PD1E Datasheet Page 9 AUIRGP50B60PD1E Datasheet Page 10 AUIRGP50B60PD1E Datasheet Page 11

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AUIRGP50B60PD1E Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.85V @ 15V, 50A
Power - Max390W
Switching Energy255µJ (on), 375µJ (off)
Input TypeStandard
Gate Charge205nC
Td (on/off) @ 25°C30ns/130ns
Test Condition390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr)42ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

270µJ (on), 230µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 20Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Vce(on) (Max) @ Vge, Ic

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

390V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

700ns/4.3µs

Test Condition

300V, 10A, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

145A

Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power - Max

400W

Switching Energy

1.9mJ (on), 2mJ (off)

Input Type

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Gate Charge

143nC

Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

ISOPLUS247™

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