Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 62/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK-3 |
2,844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | ±20V | 10300pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 195A TO247 |
3,798 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-247 |
5,508 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 120A TO263-3 |
2,556 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 120A | 10V | 4.8mOhm @ 100A, 10V | 4.9V @ 255µA | 84nC @ 10V | ±20V | 380pF @ 75V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
6,840 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 48A TO220 |
7,506 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 250V 96A TO247AC |
4,500 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 12mOhm @ 58A, 10V | 4V @ 270µA | 203nC @ 10V | ±20V | 9915pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | 4.5V @ 900µA | 79nC @ 10V | ±20V | 3194pF @ 400V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW |
7,200 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 109nC @ 10V | ±20V | 4354pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO220-3 |
5,940 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 25A PQFN |
6,012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.7mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | ±20V | 2496pF @ 10V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 35A TSDSON-8 |
8,064 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 35A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2V @ 250µA | 17nC @ 10V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 65A TDSON-8 |
3,330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 2100pF @ 15V | - | 2.5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 53A TDSON-8 |
3,384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 53A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 21nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A SOT223 |
3,312 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
4,266 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 26A PQFN |
3,942 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | ±12V | 3620pF @ 10V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 3.44A 8DSO |
8,082 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 875pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 45A TDSON-8 |
7,326 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8.5A (Ta), 45A (Tc) | 10V | 19.6mOhm @ 45A, 10V | 4V @ 42µA | 34nC @ 10V | ±20V | 2300pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 17.7A TDSON-8 |
3,474 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 17.7A (Ta), 100A (Tc) | 6V, 10V | 6mOhm @ 50A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6020pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
7,290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.2V @ 250µA | 56nC @ 10V | ±20V | 4400pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
5,112 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2V @ 250µA | 173nC @ 10V | ±20V | 13000pF @ 15V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 23A TSDSON-8 |
3,402 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 23A (Ta), 40A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2800pF @ 12V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
7,686 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 95A 8TDSON |
7,272 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 95A (Tc) | 6V, 10V | 5.2mOhm @ 47.5A, 10V | 3.8V @ 49µA | 40nC @ 10V | ±20V | 2900pF @ 40V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO220 |
5,418 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 1.8A IPAK |
4,896 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | ±20V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 250V 25A |
5,400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220 |
6,462 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 6A TO220 |
5,238 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |