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IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1

For Reference Only

Part Number IMZ120R030M1HXKSA1
PNEDA Part # IMZ120R030M1HXKSA1
Description COOLSIC MOSFETS 1200V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IMZ120R030M1HXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIMZ120R030M1HXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IMZ120R030M1HXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1.2kV
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs63nC @ 18V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds2.12nF @ 800V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-1
Package / CaseTO-247-4

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