IMZ120R030M1HXKSA1
For Reference Only
Part Number | IMZ120R030M1HXKSA1 |
PNEDA Part # | IMZ120R030M1HXKSA1 |
Description | COOLSIC MOSFETS 1200V |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,844 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IMZ120R030M1HXKSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IMZ120R030M1HXKSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IMZ120R030M1HXKSA1 Specifications
Manufacturer | Infineon Technologies |
Series | CoolSiC™ |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1.2kV |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 18V |
Vgs (Max) | +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds | 2.12nF @ 800V |
FET Feature | - |
Power Dissipation (Max) | 227W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-4-1 |
Package / Case | TO-247-4 |
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