Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPA60R060P7XKSA1

IPA60R060P7XKSA1

For Reference Only

Part Number IPA60R060P7XKSA1
PNEDA Part # IPA60R060P7XKSA1
Description MOSFET N-CHANNEL 600V 48A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,506
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA60R060P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA60R060P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPA60R060P7XKSA1 Datasheet
  • where to find IPA60R060P7XKSA1
  • Infineon Technologies

  • Infineon Technologies IPA60R060P7XKSA1
  • IPA60R060P7XKSA1 PDF Datasheet
  • IPA60R060P7XKSA1 Stock

  • IPA60R060P7XKSA1 Pinout
  • Datasheet IPA60R060P7XKSA1
  • IPA60R060P7XKSA1 Supplier

  • Infineon Technologies Distributor
  • IPA60R060P7XKSA1 Price
  • IPA60R060P7XKSA1 Distributor

IPA60R060P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2895pF @ 400V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IPS65R1K5CEAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 100V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Stub Leads, IPak

NX138BKWF

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 30V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70

Package / Case

SC-70, SOT-323

MTM231230L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 1A, 4V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMini3-G1

Package / Case

SC-70, SOT-323

NVTFWS010N10MCLTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IXFP24N60X

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

175mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1910pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

DM74LS14M

DM74LS14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

SMBJ16A

SMBJ16A

Taiwan Semiconductor Corporation

TVS DIODE 16V 26V DO214AA

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

SHT11

SHT11

Sensirion AG

SENSOR HUMID/TEMP 5V DTL 3% SMD

SMBJ58A

SMBJ58A

Taiwan Semiconductor Corporation

TVS DIODE 58V 93.6V DO214AA

VLCF5020T-220MR75-1

VLCF5020T-220MR75-1

TDK

FIXED IND 22UH 750MA 496 MOHM

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

H1102NL

H1102NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206