IPA80R900P7XKSA1
For Reference Only
Part Number | IPA80R900P7XKSA1 |
PNEDA Part # | IPA80R900P7XKSA1 |
Description | MOSFET N-CHANNEL 800V 6A TO220 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 5,238 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA80R900P7XKSA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPA80R900P7XKSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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IPA80R900P7XKSA1 Specifications
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 500V |
FET Feature | - |
Power Dissipation (Max) | 26W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220 Full Pack |
Package / Case | TO-220-3 Full Pack |
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