Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 38/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 15A 8TSDSON |
4,194 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2V @ 250µA | 15nC @ 10V | ±20V | 950pF @ 15V | - | 2.1W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 71A TDSON-8 |
6,786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 71A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2V @ 250µA | 40nC @ 10V | ±16V | 3100pF @ 15V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO252-3 |
7,920 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 43W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 7A TO-252 |
6,894 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
2,502 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2V @ 250µA | 27nC @ 10V | ±20V | 2100pF @ 15V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN |
5,724 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | ±20V | 2360pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8 |
2,286 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 80A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2V @ 250µA | 46nC @ 10V | ±20V | 3600pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
2,160 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
2,880 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 23µA | 33nC @ 10V | ±20V | 2700pF @ 30V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 57A DPAK |
3,474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 900pF @ 13V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
6,822 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1030pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 30V 21A PQFN5X6 |
6,894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 83A (Tc) | 4.5V, 10V | 4.9mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | ±20V | 2600pF @ 10V | - | 3.4W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 2.5A TO252-3 |
7,506 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | 150pF @ 500V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 43A DPAK |
5,634 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 780pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
2,988 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 8.4mOhm @ 20A, 10V | 3.4V @ 10µA | 13.7nC @ 10V | ±20V | 771pF @ 25V | - | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 8.5A 8-SOIC |
7,344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57nC @ 10V | ±20V | 1200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
8,748 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 93A TDSON-8 |
4,608 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8-SOIC |
2,340 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | ±8V | 8676pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 6.8A 8-SOIC |
2,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.7V, 4.5V | 35mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
COOLMOS P7 700V SOT-223 |
5,526 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 10V | ±16V | 424pF @ 400V | - | 7.1W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | ±20V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
5,310 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 13A, 10V | 2V @ 26µA | 24nC @ 10V | ±20V | 621pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223 |
2,808 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 660pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 25V 50A TO252-3-11 |
7,002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | 2V @ 30µA | 19nC @ 5V | ±20V | 2390pF @ 15V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 6PQFN |
8,388 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Tc) | 4.5V, 10V | 42mOhm @ 6.7A, 10V | 2.3V @ 10µA | 5.6nC @ 4.5V | ±20V | 440pF @ 50V | - | 11.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 21A TDSON-8 |
6,408 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 72A (Tc) | 4.5V, 10V | 3.7mOhm @ 30A, 10V | 2V @ 250µA | 15nC @ 10V | ±20V | 960pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC |
5,742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 2.7V, 4.5V | 22mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | ±12V | 1600pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 950V 2A SOT223 |
2,952 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6nC @ 10V | ±20V | 196pF @ 400V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |