IPD26N06S2L35ATMA2
For Reference Only
| Part Number | IPD26N06S2L35ATMA2 |
| PNEDA Part # | IPD26N06S2L35ATMA2 |
| Description | MOSFET N-CH 55V 30A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,310 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD26N06S2L35ATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD26N06S2L35ATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD26N06S2L35ATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 26µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 621pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 57A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 210W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
