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IPZ40N04S58R4ATMA1

IPZ40N04S58R4ATMA1

For Reference Only

Part Number IPZ40N04S58R4ATMA1
PNEDA Part # IPZ40N04S58R4ATMA1
Description MOSFET N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPZ40N04S58R4ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPZ40N04S58R4ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPZ40N04S58R4ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs13.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds771pF @ 25V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-32
Package / Case8-PowerTDFN

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