BSS192PH6327FTSA1
For Reference Only
| Part Number | BSS192PH6327FTSA1 |
| PNEDA Part # | BSS192PH6327FTSA1 |
| Description | MOSFET P-CH 250V 0.19A SOT-89 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 176,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSS192PH6327FTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSS192PH6327FTSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSS192PH6327FTSA1 Datasheet
- where to find BSS192PH6327FTSA1
- Infineon Technologies
- Infineon Technologies BSS192PH6327FTSA1
- BSS192PH6327FTSA1 PDF Datasheet
- BSS192PH6327FTSA1 Stock
- BSS192PH6327FTSA1 Pinout
- Datasheet BSS192PH6327FTSA1
- BSS192PH6327FTSA1 Supplier
- Infineon Technologies Distributor
- BSS192PH6327FTSA1 Price
- BSS192PH6327FTSA1 Distributor
BSS192PH6327FTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 190mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT89 |
| Package / Case | TO-243AA |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 95mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT3 Package / Case SC-96 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.34A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 86mOhm @ 1.34A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 585pF @ 4V FET Feature - Power Dissipation (Max) 236mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-6 Package / Case SOT-563, SOT-666 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 210A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 76A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 210mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 125W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (8x8) HV Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V FET Feature - Power Dissipation (Max) 2.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8-FL Package / Case 8-PowerTDFN |
