Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF5802TRPBF

IRF5802TRPBF

For Reference Only

Part Number IRF5802TRPBF
PNEDA Part # IRF5802TRPBF
Description MOSFET N-CH 150V 0.9A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 47,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5802TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5802TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF5802TRPBF Datasheet
  • where to find IRF5802TRPBF
  • Infineon Technologies

  • Infineon Technologies IRF5802TRPBF
  • IRF5802TRPBF PDF Datasheet
  • IRF5802TRPBF Stock

  • IRF5802TRPBF Pinout
  • Datasheet IRF5802TRPBF
  • IRF5802TRPBF Supplier

  • Infineon Technologies Distributor
  • IRF5802TRPBF Price
  • IRF5802TRPBF Distributor

IRF5802TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds88pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

AUIRF2807

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3820pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPI08CN10N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 95A, 10V

Vgs(th) (Max) @ Id

4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 50V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IXTP32N65X

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2205pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

2N6804

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AA (TO-3)

Package / Case

TO-204AA, TO-3

NTD3055-094-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

94mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 48W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

PM450CLA060

PM450CLA060

Powerex Inc.

MOD IPM L-SER 6PAC 600V 450A

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

MMBT2907

MMBT2907

ON Semiconductor

TRANS PNP 40V 0.8A SOT-23

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

W25Q80DVSVIG

W25Q80DVSVIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8VSOP

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

AP2127K-1.8TRG1

AP2127K-1.8TRG1

Diodes Incorporated

IC REG LINEAR 1.8V 300MA SOT23-5

AD7495ARMZ

AD7495ARMZ

Analog Devices

IC ADC 12BIT SAR 8MSOP

ACPL-247-500E

ACPL-247-500E

Broadcom

OPTOISO 3KV 4CH TRANS 16SOIC

FDS6680AS

FDS6680AS

ON Semiconductor

MOSFET N-CH 30V 11.5A 8SOIC