Infineon Technologies Transistors - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 108/225
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK |
6,354 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK |
5,040 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 17A TO-262 |
4,482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
2,412 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
2,574 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 2A SOT223 |
2,592 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 230pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 55A DPAK |
8,964 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 35A DPAK |
7,218 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 17A I-PAK |
5,094 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 23A I-PAK |
8,586 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4.5V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 35A I-PAK |
3,438 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK |
3,492 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 30A D2PAK |
8,676 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK |
2,970 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 4.4A 6-TSOP |
6,750 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | ±12V | 1079pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC |
3,672 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC |
4,410 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC |
7,830 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223 |
4,446 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 660pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223 |
5,634 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | ±16V | 840pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
6,048 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO8 |
3,384 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 240pF @ 15V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 5.7A MICRO8 |
7,920 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.7A (Ta) | 2.7V, 4.5V | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8 |
5,670 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 35mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 520pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 3.6A MICRO8 |
3,654 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | ±12V | 590pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 8.2A MICRO8 |
8,658 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | ±12V | 2520pF @ 10V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23 |
7,092 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.7V, 4.5V | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | ±12V | 740pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 1.2A SOT-23 |
2,160 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5nC @ 10V | ±20V | 85pF @ 25V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 760MA SOT-23 |
5,310 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 760mA (Ta) | 4.5V, 10V | 600mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | ±20V | 75pF @ 25V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 780MA SOT-23 |
2,682 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | ±12V | 97pF @ 15V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |