Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 106/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
4,194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK |
6,966 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK |
3,708 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK |
4,446 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB |
8,982 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
8,946 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC |
3,960 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA | 125nC @ 5V | ±12V | 8075pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 4.7A 8-SOIC |
7,722 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | ±20V | 710pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 4.7A 8-SOIC |
3,096 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | ±20V | 710pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC |
2,808 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A 8-SOIC |
2,304 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | ±20V | 440pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
5,904 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
7,164 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 15A 8-SOIC |
4,104 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | ±12V | 3480pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6,912 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51nC @ 4.5V | ±12V | 3150pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.2A MICRO8 |
4,050 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | ±12V | 2520pF @ 10V | - | 1.8W (Ta) | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,110 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
7,704 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Tc) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
2,700 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
6,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.6A 8-SOIC |
8,064 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V | 7.5mOhm @ 15A, 4.5V | 1V @ 250µA | 86nC @ 5V | ±12V | 7300pF @ 16V | - | 3.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14.5A 8-SOIC |
8,856 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V | 8.5mOhm @ 15A, 4.5V | 1V @ 250µA | 75nC @ 5V | ±12V | 7300pF @ 16V | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 14A 8-SOIC |
4,734 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 14A (Ta) | 4.5V | 11mOhm @ 15A, 4.5V | 1V @ 250µA | 23nC @ 5V | ±12V | 1800pF @ 16V | - | 3.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC |
7,452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | ±12V | 1760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC |
8,784 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | ±12V | 1760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC |
3,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A D2PAK |
6,984 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK |
8,874 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK |
8,010 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-247AC |
7,488 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |