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SI4435DY

SI4435DY

For Reference Only

Part Number SI4435DY
PNEDA Part # SI4435DY_43
Description MOSFET P-CH 30V 8A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4435DY Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSI4435DY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4435DY, SI4435DY Datasheet (Total Pages: 8, Size: 82.65 KB)
PDFSI4435DY Datasheet Cover
SI4435DY Datasheet Page 2 SI4435DY Datasheet Page 3 SI4435DY Datasheet Page 4 SI4435DY Datasheet Page 5 SI4435DY Datasheet Page 6 SI4435DY Datasheet Page 7 SI4435DY Datasheet Page 8

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SI4435DY Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2320pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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