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IRF7663TR

IRF7663TR

For Reference Only

Part Number IRF7663TR
PNEDA Part # IRF7663TR
Description MOSFET P-CH 20V 8.2A MICRO8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7663TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7663TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7663TR, IRF7663TR Datasheet (Total Pages: 7, Size: 77.38 KB)
PDFIRF7663TR Datasheet Cover
IRF7663TR Datasheet Page 2 IRF7663TR Datasheet Page 3 IRF7663TR Datasheet Page 4 IRF7663TR Datasheet Page 5 IRF7663TR Datasheet Page 6 IRF7663TR Datasheet Page 7

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IRF7663TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2520pF @ 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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