Vishay Siliconix Transistors - FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single

ManufacturerVishay Siliconix

Records 3,936

Page 132/132

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIHB22N60S-GE3	Vishay Siliconix	MOSFET N-CH 650V TO263	4,878	S	N-Channel	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	190mOhm @ 11A, 10V	4V @ 250µA	110nC @ 10V	±30V	2.81nF @ 25V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D²PAK (TO-263)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIA430DJ-T4-GE3	Vishay Siliconix	MOSFET N-CH 20V SC-70-6	2,556	TrenchFET®	N-Channel	MOSFET (Metal Oxide)	20V	12A (Ta), 12A (Tc)	4.5V, 10V	13.5mOhm @ 7A, 10V	3V @ 250µA	18nC @ 10V	±20V	800pF @ 10V	-	3.5W (Ta), 19.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
SIA444DJT-T4-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD	6,552	TrenchFET®	N-Channel	MOSFET (Metal Oxide)	30V	11A (Ta), 12A (Tc)	4.5V, 10V	17mOhm @ 7.4A, 10V	2.2V @ 250µA	15nC @ 10V	±20V	560pF @ 15V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
SIA462DJ-T4-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD	6,894	TrenchFET®	N-Channel	MOSFET (Metal Oxide)	30V	12A (Ta), 12A (Tc)	4.5V, 10V	18mOhm @ 9A, 10V	2.4V @ 250µA	17nC @ 10V	±20V	570pF @ 15V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
SUC85N15-19DWF	Vishay Siliconix	MOSFET N-CH	3,726	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC430	Vishay Siliconix	MOSFET N-CH 500V TO PKG	3,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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