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SIA444DJT-T4-GE3

SIA444DJT-T4-GE3

For Reference Only

Part Number SIA444DJT-T4-GE3
PNEDA Part # SIA444DJT-T4-GE3
Description MOSFET N-CH 30V SMD
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,552
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA444DJT-T4-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA444DJT-T4-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA444DJT-T4-GE3, SIA444DJT-T4-GE3 Datasheet (Total Pages: 8, Size: 1,122.14 KB)
PDFSIA444DJT-T4-GE3 Datasheet Cover
SIA444DJT-T4-GE3 Datasheet Page 2 SIA444DJT-T4-GE3 Datasheet Page 3 SIA444DJT-T4-GE3 Datasheet Page 4 SIA444DJT-T4-GE3 Datasheet Page 5 SIA444DJT-T4-GE3 Datasheet Page 6 SIA444DJT-T4-GE3 Datasheet Page 7 SIA444DJT-T4-GE3 Datasheet Page 8

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SIA444DJT-T4-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs17mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 15V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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