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Toshiba Semiconductor and Storage Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerToshiba Semiconductor and Storage
Records 225
Page 4/8
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CTS05F40,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 500MA CST2
6,084
-
Schottky
40V
500mA
810mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
15µA @ 40V
28pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2
150°C (Max)
DSR01S30SC,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 100MA SC2
5,130
-
Schottky
30V
100mA
620mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
700µA @ 30V
8.2pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
SC2
125°C (Max)
CUS05F40,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 500MA USC
8,928
-
Schottky
40V
500mA
810mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
15µA @ 40V
28pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
150°C (Max)
1SS294,LF
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 100MA SMINI
2,430
-
Schottky
40V
100mA
600mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
25pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
125°C (Max)
CUS10F40,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A USC
2,988
-
Schottky
40V
1A
670mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 40V
74pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
150°C (Max)
CBS10F40,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A CST2B
6,282
-
Schottky
40V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 40V
74pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2B
150°C (Max)
CBS10S30,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1A CST2B
5,580
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
135pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2B
125°C (Max)
CBS10S40,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A CST2B
4,806
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
120pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2B
125°C (Max)
CRG03(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A SFLAT
5,400
-
Standard
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRG01(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 700MA SFLAT
7,992
-
Standard
100V
700mA
1.1V @ 700mA
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRG07(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 700MA S-FLAT
3,672
-
Standard
400V
700mA
1.1V @ 700mA
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
175°C (Max)
CRG09(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A S-FLAT
7,848
-
Standard
400V
1A
1.1V @ 700mA
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRG02(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 700MA SFLAT
7,488
-
Standard
400V
700mA
1.1V @ 700mA
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRG04(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 600V 1A SFLAT
6,930
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRF03(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 600V 700MA SFLAT
4,374
-
Standard
600V
700mA
2V @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
50µA @ 600V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CRG05(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 800V 1A S-FLAT
6,300
-
Standard
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CMG05(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
2,772
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRH02(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 500MA S-FLAT
6,012
-
Standard
200V
500mA
950mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CUS10I30A(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A US-FLAT
7,020
-
Schottky
30V
1A
390mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 30V
50pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
150°C (Max)
CUS06(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1A US-FLAT
2,502
-
Schottky
20V
1A
450mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 20V
40pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
CMG06(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 600V 1A M-FLAT
4,608
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CUS05(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1A US-FLAT
3,186
-
Schottky
20V
1A
370mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
40pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 125°C
CUS03(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 700MA US-FLAT
2,448
-
Schottky
40V
700mA
520mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
45pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
CUS04(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 700MA US-FLAT
4,248
-
Schottky
60V
700mA
580mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
38pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
CMG07(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
8,424
-
Standard
400V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
100ns
-
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-
CMH04(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 1A MFLAT
5,184
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRS10I30C(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A S-FLAT
4,032
-
Schottky
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
82pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CRS15I30A(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A S-FLAT
8,640
-
Schottky
30V
1.5A
460mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 30V
50pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CRS15I30B(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A S-FLAT
6,354
-
Schottky
30V
1.5A
400mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
82pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CRS15I40A(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1.5A S-FLAT
4,356
-
Schottky
40V
1.5A
550mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 40V
35pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)