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CMG06(TE12L,Q,M)

CMG06(TE12L,Q,M)

For Reference Only

Part Number CMG06(TE12L,Q,M)
PNEDA Part # CMG06-TE12L-Q-M
Description DIODE GEN PURP 600V 1A M-FLAT
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CMG06(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberCMG06(TE12L,Q,M)
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
CMG06(TE12L, CMG06(TE12L Datasheet (Total Pages: 4, Size: 105.93 KB)
PDFCMG06(TE12L Datasheet Cover
CMG06(TE12L Datasheet Page 2 CMG06(TE12L Datasheet Page 3 CMG06(TE12L Datasheet Page 4

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CMG06(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSOD-128
Supplier Device PackageM-FLAT (2.4x3.8)
Operating Temperature - Junction-40°C ~ 150°C

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