CBS10S30,L3F
For Reference Only
| Part Number | CBS10S30,L3F |
| PNEDA Part # | CBS10S30-L3F |
| Description | DIODE SCHOTTKY 20V 1A CST2B |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 5,580 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CBS10S30 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | CBS10S30,L3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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CBS10S30 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 450mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 30V |
| Capacitance @ Vr, F | 135pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 2-SMD, No Lead |
| Supplier Device Package | CST2B |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Microsemi Corporation Series MILITARY, MIL-PRF-19500/478 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 950mV @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F 300pF @ 10V, 1MHz Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-203AA (DO-4) Operating Temperature - Junction -65°C ~ 175°C |
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