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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 99/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
TSN525M60HS4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 60V 25A 8PDFN
8,046
Automotive, AEC-Q101
Standard
60V
25A
630mV @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
-55°C ~ 150°C
TST10H120CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 5A TO220AB
5,454
-
Schottky
120V
5A
790mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF1604G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A TO220AB
8,136
-
Standard
200V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
MBR16150 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 16A TO220AC
3,168
-
Schottky
150V
16A
950mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1635HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 35V 16A TO220AC
4,842
Automotive, AEC-Q101
Schottky
35V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1645HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 16A TO220AC
6,120
Automotive, AEC-Q101
Schottky
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1650HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 16A TO220AC
2,592
Automotive, AEC-Q101
Schottky
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MBR1660HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 16A TO220AC
7,506
Automotive, AEC-Q101
Schottky
60V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
HERAF1605G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AC
7,542
-
Standard
400V
16A
1.3V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
UGS5JHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A TO263AB
8,064
Automotive, AEC-Q101
Standard
600V
5A
2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
P2500M A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 25A P2500
2,754
-
Standard
-
25A
870mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 175°C
SRAS8100 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A TO263AB
6,732
-
Schottky
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SF1606G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A TO220AB
8,154
-
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SFS1006GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO263AB
5,670
Automotive, AEC-Q101
Standard
400V
10A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
UGF8JHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC
7,920
Automotive, AEC-Q101
Standard
600V
8A
2.9V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
MBRS10100HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO263AB
2,700
Automotive, AEC-Q101
Schottky
100V
10A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 175°C
MUR860HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC
4,464
Automotive, AEC-Q101
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SFA1004G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
3,384
-
Standard
200V
10A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SF1608G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A TO220AB
7,560
-
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SFA1005G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO220AC
7,722
-
Standard
300V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SF2004G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 20A TO220AB
4,752
-
Standard
200V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
P2500MHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 25A P2500
7,614
Automotive, AEC-Q101
Standard
-
25A
870mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 175°C
SFF2004G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 20A ITO220AB
2,592
-
Standard
200V
20A
975mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
90pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
SF2005G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 20A TO220AB
8,604
-
Standard
300V
20A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SF2006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 20A TO220AB
8,514
-
Standard
400V
20A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SRAS8100HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A TO263AB
6,444
Automotive, AEC-Q101
Schottky
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFF1608G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 16A ITO220AB
4,536
-
Standard
600V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
MBR1690HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 16A TO220AC
3,024
Automotive, AEC-Q101
Schottky
90V
16A
850mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 90V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UGF8JD C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC
8,514
-
Standard
600V
8A
2.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
MBRF1645HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 16A ITO220AC
5,220
Automotive, AEC-Q101
Schottky
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C