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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 96/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SR1203HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD
7,506
Automotive, AEC-Q101
Schottky
30V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1204 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 12A DO201AD
2,376
-
Schottky
40V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1204HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 12A DO201AD
6,570
Automotive, AEC-Q101
Schottky
40V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1040 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 10A TO220AB
4,374
-
Schottky
40V
10A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 125°C
HER601G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
5,544
-
Standard
50V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER602G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
4,554
-
Standard
100V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER603G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A R-6
3,472
-
Standard
200V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER604G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A R-6
2,268
-
Standard
300V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER605G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A R-6
2,196
-
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER606G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A R-6
2,412
-
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
65pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
1N4006GA0
Taiwan Semiconductor Corporation
1A,800V,STD.GLASS PASSIVATED REC
6,966
-
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SK82C R7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 8A DO214AB
2,646
-
Schottky
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
SR815HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A DO201AD
2,304
Automotive, AEC-Q101
Schottky
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
MBR10150 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO220AC
8,334
-
Standard
150V
10A
1.05V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPAS1005 MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
3,924
-
Standard
600V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SR1060 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A TO220AB
3,114
-
Schottky
60V
10A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SRA1060 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A TO220AC
2,196
-
Schottky
60V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SR1202 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 12A DO201AD
5,472
-
Schottky
20V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
MBRF760 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 7.5A ITO220AC
4,140
-
Schottky
60V
7.5A
750mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
UGF5J C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A ITO220AC
3,996
-
Standard
600V
5A
3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
1N4006GR0
Taiwan Semiconductor Corporation
1A,800V,STD.GLASS PASSIVATED REC
4,032
-
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
MBRF10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A ITO220AC
2,466
-
Schottky
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
SFAF506G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A ITO220AC
3,294
-
Standard
400V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
70pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
TSPB15U45S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A SMPC4.0
2,700
-
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB15U50S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 15A SMPC4.0
6,336
-
Schottky
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSN520M60 S4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 60V 20A 8PDFN
2,070
-
Standard
60V
20A
580mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
-55°C ~ 150°C
SK12H45 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 12A DO201AD
8,298
-
Schottky
45V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 45V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK12H60 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 12A DO201AD
4,770
-
Schottky
60V
12A
700mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
200°C (Max)
SK59CHR7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 5A DO214AB
7,398
Automotive, AEC-Q101
Schottky
90V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 90V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK810CHR7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A DO214AB
6,984
Automotive, AEC-Q101
Schottky
100V
8A
900mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C