Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 102/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SRAS20150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	5,238	-	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRA20150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO220AC	8,406	-	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF2004PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	5,436	-	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	4,068	-	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	3,744	-	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	6,552	-	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1606PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO247AD	5,922	-	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRAS20150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	2,592	Automotive, AEC-Q101	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF2001PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO247AD	7,146	Automotive, AEC-Q101	Standard	50V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO247AD	5,040	Automotive, AEC-Q101	Standard	100V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2003PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO247AD	6,948	Automotive, AEC-Q101	Standard	150V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	4,968	Automotive, AEC-Q101	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	3,078	Automotive, AEC-Q101	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2006PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	4,302	Automotive, AEC-Q101	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2007PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO247AD	3,436	Automotive, AEC-Q101	Standard	500V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	7,740	Automotive, AEC-Q101	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
UGA15120 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	3,024	-	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
UGA15120HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	5,760	Automotive, AEC-Q101	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF3006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD	5,724	-	Standard	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3008PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 30A TO247AD	8,892	Automotive, AEC-Q101	Standard	600V	30A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
BAS85 L1G	Taiwan Semiconductor Corporation	DIODE SCHTKY 30V 200MA MINI MELF	2,682	-	Schottky	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	125°C (Max)
ES1JF R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SMA-FL	4,086	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-55°C ~ 150°C
S1MFL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123FL	6,786	-	Standard	1000V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
LL4001G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A MELF	4,212	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4002G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A MELF	5,490	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4003G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A MELF	4,014	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4005G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MELF	6,606	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4006G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A MELF	4,500	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
LL4007G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A MELF	3,996	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
1N4001G R1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	4,032	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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