Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Taiwan Semiconductor Corporation Rectifiers - Single

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 78/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ESH2CA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
5,148
-
Standard
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
ESH2DA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
4,284
-
Standard
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
ES3A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
2,268
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
6,372
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6,588
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3DV V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,266
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ESH3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,680
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6,354
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
7,236
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR305S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7,866
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,352
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
2,214
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,428
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
S8GC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A DO214AB
3,400
-
Standard
400V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8JC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A DO214AB
4,464
-
Standard
600V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8KC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A DO214AB
8,262
-
Standard
800V
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8MC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A DO214AB
4,986
-
Standard
-
8A
-
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10GC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A DO214AB
3,474
-
Standard
400V
10A
-
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10JC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A DO214AB
6,498
-
Standard
600V
10A
-
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10KC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A DO214AB
8,190
-
Standard
800V
10A
-
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10MC V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 10A DO214AB
5,148
-
Standard
-
10A
-
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3M M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
3,762
-
Standard
-
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES2JHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
3,490
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK310A M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO214AC
4,770
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK315A M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AC
3,942
-
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS310LHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
2,520
Automotive, AEC-Q101
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SR315HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO201AD
8,784
Automotive, AEC-Q101
Schottky
150V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
6,804
-
Standard
200V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2,574
-
Standard
600V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
2,142
-
Standard
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 50V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C