MUR315S V6G
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For Reference Only
Part Number | MUR315S V6G |
PNEDA Part # | MUR315S-V6G |
Description | DIODE GEN PURP 150V 3A DO214AB |
Manufacturer | Taiwan Semiconductor Corporation |
Unit Price | Request a Quote |
In Stock | 2,214 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MUR315S V6G Resources
Brand | Taiwan Semiconductor Corporation |
ECAD Module |
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Mfr. Part Number | MUR315S V6G |
Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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MUR315S V6G Specifications
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | - |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 25ns |
Current - Reverse Leakage @ Vr | 5µA @ 150V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer SMC Diode Solutions Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.1V @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.5µs Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package SMB Operating Temperature - Junction -55°C ~ 150°C |