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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 79/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
S3AHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
3,598
Automotive, AEC-Q101
Standard
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 50V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,752
-
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3BHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
7,398
Automotive, AEC-Q101
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3DHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
8,172
Automotive, AEC-Q101
Standard
200V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3GHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7,038
Automotive, AEC-Q101
Standard
400V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3JHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
4,194
Automotive, AEC-Q101
Standard
600V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3KHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
8,478
Automotive, AEC-Q101
Standard
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3MHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
8,100
Automotive, AEC-Q101
Standard
-
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
LL5819 L0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A MELF
2,772
-
Schottky
40V
1A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
MUR190HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AC
2,376
Automotive, AEC-Q101
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
LL5817 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
4,212
-
Schottky
20V
1A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LL5818 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MELF
3,490
-
Schottky
30V
1A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR102 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
6,192
-
Schottky
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR103 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MELF
8,640
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR104 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A MELF
7,326
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR105 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A MELF
2,430
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 150°C
LSR106 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A MELF
7,056
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 150°C
S4J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
3,492
-
Standard
600V
4A
1.15V @ 4A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2,538
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR340S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
6,768
-
Standard
400V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR360S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
3,006
-
Standard
600V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
SR502 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A DO201AD
4,788
-
Schottky
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR502 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A DO201AD
5,742
-
Schottky
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SK310AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO214AC
2,610
Automotive, AEC-Q101
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK315AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AC
2,016
Automotive, AEC-Q101
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS3A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
5,256
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
2,466
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
3,870
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3JHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2,016
Automotive, AEC-Q101
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
UG2DHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
4,752
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C