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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 21/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
TST10H150CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A TO220AB
18,240
-
Schottky
150V
5A
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30L100CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A TO220AB
22,560
-
Schottky
100V
15A
820mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST10H100CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A TO220AB
21,312
-
Schottky
100V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SRF1060 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A ITO220AB
19,776
-
Schottky
60V
10A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
SFF1604G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 16A ITO220AB
23,064
-
Standard
200V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
TST30L45CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A TO220AB
23,052
-
Schottky
45V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST20U60CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 10A TO220AB
17,328
-
Schottky
60V
10A
540mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST40L120CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 20A TO220AB
20,160
-
Schottky
120V
20A
800mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST40L100CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 20A TO220AB
19,632
-
Schottky
100V
20A
750mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SRF2060 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 20A ITO220AB
18,816
-
Schottky
60V
20A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
TST20H150CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 10A TO220AB
19,212
-
Schottky
150V
10A
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30U45C C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A TO220AB
19,824
-
Schottky
45V
15A
540mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST20H200CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 10A TO220AB
18,180
-
Schottky
200V
10A
930mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30U60C C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 15A TO220AB
22,596
-
Schottky
60V
15A
570mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30U60CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 15A TO220AB
19,860
-
Schottky
60V
15A
580mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30U45CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A TO220AB
20,256
-
Schottky
45V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST40L45CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 20A TO220AB
16,596
-
Schottky
45V
20A
590mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30H200CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 15A TO220AB
18,708
-
Schottky
200V
15A
920mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST30H150CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 15A TO220AB
20,160
-
Schottky
150V
15A
900mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 150V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
TST20H120CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 10A TO220AB
22,956
-
Schottky
120V
10A
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
S5J V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
18,192
-
Standard
600V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS36 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 60V DO-214AB
16,764
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3J V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
20,256
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
17,700
-
Standard
200V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HERA808G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
7,992
-
Standard
-
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 1000V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SFF2005G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 20A ITO220AB
12,822
-
Standard
300V
20A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
90pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
1N4148WS-G RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323
3,276
-
Standard
75V
150mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAS40 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA SOT23
6,210
-
Schottky
40V
200mA
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
5ns
200nA @ 40V
5pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 125°C
S1JL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
7,254
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
5,598
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C