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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 23/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ES3DBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
2,844
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
2,250
-
Standard
400V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK56B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
5,472
-
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SR320 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A DO201AD
2,628
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S3K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
6,120
-
Standard
800V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8MC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 8A DO214AB
3,580
-
Standard
1000V
8A
985mV @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8KC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A DO214AB
8,208
-
Standard
800V
8A
985mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S8MC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 8A DO214AB
3,330
-
Standard
1000V
8A
985mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 1000V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK54C V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 40V DO-214AB
4,806
-
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
2,034
-
Standard
600V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SF36G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2,808
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
MUR360S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
6,192
-
Standard
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
RS3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4,536
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK320B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A DO214AA
3,042
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS36HR7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AB
8,424
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10GC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A DO214AB
5,310
-
Standard
400V
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
8,910
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR460SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
5,202
-
Standard
600V
4A
1.25V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
S12KC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
5,706
-
Standard
800V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 800V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S12KCHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
3,384
-
Standard
800V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 800V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S12JC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A DO214AB
2,466
-
Standard
600V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 600V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS310 R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,640
-
Standard
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
TPMR6G S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A TO277A
8,370
-
Standard
400V
6A
1.2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SS320 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 200V DO-214AB
8,550
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR460S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
3,114
-
Standard
600V
4A
1.25V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR440S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
2,592
-
Standard
400V
4A
1.25V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR420S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
5,940
-
Standard
200V
4A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
S15GCHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 15A DO214AB
4,968
-
Standard
400V
15A
1.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 400V
93pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S10KC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A DO214AB
4,086
-
Standard
800V
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S12GC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 12A DO214AB
2,124
-
Standard
400V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 400V
78pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C