Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 18/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS315LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A SOD123W	7,488	-	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
HER108G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	3,454	-	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR210 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO204AC	3,474	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RS2AAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	2,106	-	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS3DB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	16,848	-	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH1JM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MICRO SMA	6,408	-	Standard	600V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 600V	3pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SR504 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO201AD	14,388	-	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S10GC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB	7,398	-	Standard	400V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS24 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	18,828	-	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SR510 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	12,276	-	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS24MHRSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A MICRO SMA	7,542	-	Schottky	40V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
HS1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	4,410	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S2A R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	15,456	-	Standard	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UF1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	6,642	-	Standard	600V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
UF1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	7,470	-	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 400V	25pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
S3ABHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	21,540	-	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	21,840	-	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	21,708	-	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR440S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	21,288	-	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S3MB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AA	18,576	-	Standard	1000V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2M R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 2A DO214AA	15,240	-	Standard	1000V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	15,768	-	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	16,128	-	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3BB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	21,768	-	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR420S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	15,864	-	Standard	200V	4A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
UF1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	6,930	-	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 400V	25pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
MUR460S V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	15,528	-	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SS310L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	5,472	-	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	5,022	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS34 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 40V DO-214AB	15,588	-	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C

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