Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 970/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CHANNEL 700V 6A TO251 |
7,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 4V @ 250µA | 12.8nC @ 10V | ±30V | 420pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CHANNEL 700V 5A TO251 |
2,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 4V @ 250µA | 7.5nC @ 10V | ±30V | 342pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CHANNEL 700V 5A TO251 |
2,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 4V @ 250µA | 9.8nC @ 10V | ±30V | 316pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CHANNEL 700V 8A TO252 |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 20.9nC @ 10V | ±30V | 686pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CHANNEL 700V 8A TO251 |
3,168 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 20.9nC @ 10V | ±30V | 686pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 50A 8DFN |
6,678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.2V @ 250µA | 65nC @ 10V | ±20V | 2994pF @ 15V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
7,290 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5,886 |
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Infineon Technologies |
MOSFET N-CH 1TO251-3 |
8,586 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6,318 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET SOT223-4 |
8,244 |
|
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Infineon Technologies |
MOSFET N-CH TO263-3 |
3,690 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO252-5 |
4,698 |
|
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IXYS-RF |
2A 1000V MOSFET IN SMPD PACKAGE |
3,438 |
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SMPD | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 15V | 1.05Ohm @ 6A, 15V | 5.5V @ 250µA | 77nC @ 10V | ±20V | 2875pF @ 800V | - | 940W | -55°C ~ 150°C (TJ) | Surface Mount | 16-SMPD | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
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IXYS-RF |
18A 500V MOSFET IN SMPD PACKAGE |
6,120 |
|
SMPD | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 20V | 340mOhm @ 9.5A, 20V | 6.5V @ 250µA | 42nC @ 10V | ±20V | 2250pF @ 400V | - | 835W | -55°C ~ 150°C (TJ) | Surface Mount | 16-SMPD | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,416 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO220 |
6,606 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6,156 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,410 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,394 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,200 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,596 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,344 |
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Infineon Technologies |
MOSFET N-CH |
6,354 |
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Infineon Technologies |
MOSFET N-CH |
6,930 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,806 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
7,650 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
8,442 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,654 |
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Infineon Technologies |
MOSFET N-CH |
3,924 |
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