Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 686/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK |
5,472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1650pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK |
2,088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC |
5,976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 1V @ 250µA | 45nC @ 10V | ±20V | 1585pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC |
4,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78nC @ 10V | ±20V | 2240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC |
8,190 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2120pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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IXYS |
MOSFET P-CH 85V 50A TO-247AD |
7,398 |
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- | P-Channel | MOSFET (Metal Oxide) | 85V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD |
6,228 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | ±20V | 630pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A VS-8 |
3,096 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | ±20V | 1760pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Nexperia |
MOSFET N-CH 100V 34.3A LFPAK |
7,146 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 34.3A (Tc) | 10V | 23mOhm @ 10A, 10V | 4V @ 1mA | 39nC @ 10V | ±20V | 2264pF @ 25V | - | 62.5W (Tc) | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V 94.5A LFPAK |
2,106 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 94.5A (Tc) | 7V, 10V | 4.1mOhm @ 25A, 10V | 3V @ 1mA | 67nC @ 10V | ±20V | 3660pF @ 10V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 40V 75A D2PAK |
2,286 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 5mOhm @ 25A, 10V | 2V @ 1mA | 44.2nC @ 5V | ±15V | 3965pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 25V 75A D2PAK |
4,374 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 36nC @ 5V | ±20V | 3140pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 40V 75A D2PAK |
8,550 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 64nC @ 5V | ±15V | 5345pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 20V 44.7A D2PAK |
5,148 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 44.7A (Tc) | 2.5V, 5V | 16mOhm @ 25A, 5V | 1.5V @ 250µA | 15.1nC @ 5V | 12V | 800pF @ 20V | - | 57.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92 |
2,412 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 25V | - | 350mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92 |
3,312 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 200V 0.25A TO-92 |
2,412 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 250mA (Ta) | 10V | 6.4Ohm @ 250mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 60V 300MA SOT223 |
3,636 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Tc) | 10V | 1.7Ohm @ 1A, 10V | 3.5V @ 1mA | 3.2nC @ 10V | ±30V | 65pF @ 25V | - | 800mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 100V 10A TO220AB |
4,968 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 5V | 220mOhm @ 5A, 5V | 2V @ 250µA | 15nC @ 5V | ±15V | 1040pF @ 25V | - | 1.75W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 100V 12A TO220AB |
3,654 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 1mA | 50nC @ 10V | ±20V | 920pF @ 25V | - | 75W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 23A TO220AB |
3,618 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 23A (Tc) | 10V | 120mOhm @ 11.5A, 10V | 4V @ 250µA | 50nC @ 10V | ±15V | 1620pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 500V 2A TO220AB |
5,004 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 2A (Tc) | 10V | 6Ohm @ 1A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 1183pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 30V 50A TO220AB |
3,744 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V | 25mOhm @ 25A, 5V | 2V @ 250µA | 100nC @ 5V | ±15V | 4900pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 32A TO247 |
3,526 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 75mOhm @ 16A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5000pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 24V 15.9A D2PAK |
2,628 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 95A (Ta), 120.5A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | ±20V | 3440pF @ 20V | - | 1.98W (Ta), 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 7.6A D2PAK |
4,590 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 7.6A (Tc) | 4.5V, 10V | 8.2mOhm @ 30A, 10V | 2V @ 250µA | 9.5nC @ 4.5V | ±20V | 1330pF @ 20V | - | 1.04W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 9.7A D2PAK |
2,160 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 9.7A (Ta), 75A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2V @ 250µA | 13.2nC @ 10V | ±20V | 1333pF @ 20V | - | 1.25W (Ta), 74.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 28V 85A D2PAK |
3,996 |
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- | N-Channel | MOSFET (Metal Oxide) | 28V | 85A (Tc) | 4.5V, 10V | 6.8mOhm @ 40A, 10V | 3V @ 250µA | 29nC @ 4.5V | ±20V | 2150pF @ 24V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK |
4,464 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 95mOhm @ 5A, 10V | 2V @ 250µA | 1.8nC @ 5V | ±20V | 115pF @ 20V | - | 1.04W (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |