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MTW32N20EG

MTW32N20EG

For Reference Only

Part Number MTW32N20EG
PNEDA Part # MTW32N20EG
Description MOSFET N-CH 200V 32A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MTW32N20EG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMTW32N20EG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MTW32N20EG, MTW32N20EG Datasheet (Total Pages: 7, Size: 129.36 KB)
PDFMTW32N20EG Datasheet Cover
MTW32N20EG Datasheet Page 2 MTW32N20EG Datasheet Page 3 MTW32N20EG Datasheet Page 4 MTW32N20EG Datasheet Page 5 MTW32N20EG Datasheet Page 6 MTW32N20EG Datasheet Page 7

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MTW32N20EG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5000pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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