Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 534/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 600V 37A TO247 |
4,068 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82nC @ 10V | ±20V | 4165pF @ 380V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,608 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 98A TO-247AC |
4,014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 340A D2PAK |
5,094 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 150V 76A TO263 |
6,840 |
|
HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 10V | 20mOhm @ 38A, 10V | 4.5V @ 250µA | 97nC @ 10V | ±20V | 5800pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
5,022 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 2060pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
FET ENGR DEV-NOT REL |
6,768 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 128A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 310µA | 68nC @ 10V | ±20V | 5065pF @ 50V | - | 2.4W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 650V 35A TO247 |
6,786 |
|
FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145nC @ 10V | ±20V | 4895pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 79A TO220-FP |
7,470 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 79A (Tc) | 6V, 10V | 3mOhm @ 79A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220 |
8,478 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 40V 300A TO-263 |
4,050 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 2.5mOhm @ 500mA, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 40V 300A TO-263 |
8,028 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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ON Semiconductor |
MOSFET N-CH 100V 19A SO8FL |
2,790 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta), 132A (Tc) | 6V, 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 4200pF @ 50V | - | 3.4W (Ta), 165W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6,858 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
5,130 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 100V 180A TO-263-7 |
3,204 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 150V 90A TO-3P |
2,574 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 20mOhm @ 45A, 10V | 4.5V @ 1mA | 80nC @ 10V | ±30V | 4100pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 102A D2PAK |
5,112 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87nC @ 10V | ±20V | 5220pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 54A TO-220 |
8,622 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 76A TO-220 |
8,568 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 4500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 86A TO-220 |
2,826 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 4500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 300V 44A TO-3P |
4,644 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 62A TO-3P |
6,750 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 62A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 72A TO-3P |
4,410 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
7,758 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
60V/270A TRENCHT3 HIPERFET MOSFE |
5,670 |
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HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 270A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 12600pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V TO247 |
4,896 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114nC @ 10V | ±20V | 3465pF @ 380V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 25V 54A SO8FL |
3,132 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.1V @ 250µA | 82nC @ 10V | ±20V | 5538pF @ 12V | - | 3.2W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 450V 9.5A TO-247AC |
5,112 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 9.5A (Tc) | 10V | 630mOhm @ 5.7A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7P |
2,340 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9130pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |