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IPA030N10N3GXKSA1

IPA030N10N3GXKSA1

For Reference Only

Part Number IPA030N10N3GXKSA1
PNEDA Part # IPA030N10N3GXKSA1
Description MOSFET N-CH 100V 79A TO220-FP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA030N10N3GXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA030N10N3GXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPA030N10N3GXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 79A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14800pF @ 50V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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