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NTMFS4H01NFT1G

NTMFS4H01NFT1G

For Reference Only

Part Number NTMFS4H01NFT1G
PNEDA Part # NTMFS4H01NFT1G
Description MOSFET N-CH 25V 54A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4H01NFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4H01NFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4H01NFT1G, NTMFS4H01NFT1G Datasheet (Total Pages: 8, Size: 142.05 KB)
PDFNTMFS4H01NFT1G Datasheet Cover
NTMFS4H01NFT1G Datasheet Page 2 NTMFS4H01NFT1G Datasheet Page 3 NTMFS4H01NFT1G Datasheet Page 4 NTMFS4H01NFT1G Datasheet Page 5 NTMFS4H01NFT1G Datasheet Page 6 NTMFS4H01NFT1G Datasheet Page 7 NTMFS4H01NFT1G Datasheet Page 8

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NTMFS4H01NFT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C54A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5538pF @ 12V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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