Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 514/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 1000V 1.6A TO220AB |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | 10V | 10Ohm @ 800mA, 0V | - | 27nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 13A TO-220AB |
6,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | ±20V | 1100pF @ 100V | - | 102W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 4A X2 TO-220 |
2,682 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 550mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 7A TO-220 |
6,570 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.15Ohm @ 500mA, 10V | 5V @ 1mA | 13.3nC @ 10V | ±30V | 705pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 950V 6A ITO220AB |
7,776 |
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- | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 2.2Ohm @ 3A, 10V | 5V @ 250µA | 20.3nC @ 10V | ±30V | 1487pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
3,690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5 |
8,478 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90nC @ 10V | ±20V | 1730pF @ 25V | Temperature Sensing Diode | 120W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5-2 | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,374 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 10A TO-220SIS |
3,454 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 1000V 1A TO-263 |
3,726 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1A (Tc) | 10V | 15Ohm @ 500mA, 10V | 4.5V @ 50µA | 15.5nC @ 10V | ±20V | 331pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 72A TO-220 |
5,508 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Ta) | 10V | 4.4mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 4VSON |
6,696 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 21.3A (Tc) | 10V | 165mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,716 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 21.3A (Tc) | 10V | 165mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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ON Semiconductor |
MOSFET N-CH 650V 20.6A TO220-3 |
3,672 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78nC @ 10V | ±20V | 3225pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
T6 40V LL PQFN8*8 EXPANSI |
2,646 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1000V 1.4A TO-220 |
4,212 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8nC @ 10V | ±20V | 450pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 1.4A TO-252 |
2,934 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8nC @ 10V | ±20V | 450pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 200V 32A TO-220 |
2,736 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 72mOhm @ 16A, 10V | 4.5V @ 250µA | 38nC @ 10V | ±20V | 1760pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 44A TO-220 |
5,760 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 5A TO-263AA |
5,436 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.65Ohm @ 2.5A, 10V | 5V @ 1mA | 6.9nC @ 10V | ±30V | 370pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 200V 45A TO-263 |
5,616 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 45A (Ta) | 10V | 53mOhm @ 22A, 10V | 4.5V @ 1mA | - | ±30V | 2000pF @ 25V | - | 95W (Tc) | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 60V LL PQFN8*8 EXPANSI |
8,658 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 60V SG PQFN8*8 EXPANSI |
6,246 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 53.7A (Ta), 376A (Tc) | 10V | 910mOhm @ 50A, 10V | 4V @ 250µA | 113nC @ 10V | ±20V | 8705pF @ 30V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 300V 40A TO247 |
6,804 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85mOhm @ 20A, 10V | 4.1V @ 250µA | 72nC @ 10V | ±30V | 3270pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 25V 37A SO8FL |
3,978 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.1V @ 250µA | 38.5nC @ 10V | ±20V | 2651pF @ 12V | - | 3.13W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
3,690 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 4V @ 180µA | 221nC @ 10V | ±20V | 17682pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Diodes Incorporated |
MOSFET N-CH 40V 150A TO220AB |
7,254 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 20V | 2846pF @ 20V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO220 |
5,688 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO220 |
6,732 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO247 |
8,298 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |