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IXTP1R4N100P

IXTP1R4N100P

For Reference Only

Part Number IXTP1R4N100P
PNEDA Part # IXTP1R4N100P
Description MOSFET N-CH 1000V 1.4A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,212
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP1R4N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP1R4N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP1R4N100P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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