Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN95H2D2HCTI

DMN95H2D2HCTI

For Reference Only

Part Number DMN95H2D2HCTI
PNEDA Part # DMN95H2D2HCTI
Description MOSFET N-CH 950V 6A ITO220AB
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN95H2D2HCTI Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN95H2D2HCTI
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN95H2D2HCTI, DMN95H2D2HCTI Datasheet (Total Pages: 7, Size: 362.74 KB)
PDFDMN95H2D2HCTI Datasheet Cover
DMN95H2D2HCTI Datasheet Page 2 DMN95H2D2HCTI Datasheet Page 3 DMN95H2D2HCTI Datasheet Page 4 DMN95H2D2HCTI Datasheet Page 5 DMN95H2D2HCTI Datasheet Page 6 DMN95H2D2HCTI Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN95H2D2HCTI Datasheet
  • where to find DMN95H2D2HCTI
  • Diodes Incorporated

  • Diodes Incorporated DMN95H2D2HCTI
  • DMN95H2D2HCTI PDF Datasheet
  • DMN95H2D2HCTI Stock

  • DMN95H2D2HCTI Pinout
  • Datasheet DMN95H2D2HCTI
  • DMN95H2D2HCTI Supplier

  • Diodes Incorporated Distributor
  • DMN95H2D2HCTI Price
  • DMN95H2D2HCTI Distributor

DMN95H2D2HCTI Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1487pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

The Products You May Be Interested In

BUK9M156-100EX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

150mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

695pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK33

Package / Case

SOT-1210, 8-LFPAK33

STP100N8F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5955pF @ 25V

FET Feature

-

Power Dissipation (Max)

176W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

APTC60SKM24CT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 47.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

462W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1

FCP165N60E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2434pF @ 380V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

DMN3027LFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18.6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.3nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 15V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

Recently Sold

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

ACPL-064L-500E

ACPL-064L-500E

Broadcom

OPTOISO 3.75KV 2CH PUSH PULL 8SO

7443551131

7443551131

Wurth Electronics

FIXED IND 13UH 10A 11.2 MOHM SMD

SRN6045TA-470M

SRN6045TA-470M

Bourns

FIXED IND 47UH 1.6A 200 MOHM SMD

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

MT25QL01GBBB8E12-0SIT

MT25QL01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

HX5149NLT

HX5149NLT

Pulse Electronics Network

PULSE XFMR 1 CT:1CT TX/RX 360UH

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512

ES1B-E3/61T

ES1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

FDC6327C

FDC6327C

ON Semiconductor

MOSFET N/P-CH 20V SSOT-6