Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 480/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 24A 8DFN |
7,254 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Ta), 85A (Tc) | 6V, 10V | 6mOhm @ 20A, 10V | 3.4V @ 250µA | 63nC @ 10V | ±20V | 3830pF @ 50V | - | 7.3W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 650V 12A TO220F-3 |
2,412 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 250mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24nC @ 10V | ±30V | 1010pF @ 400V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 28A TO220-FP |
6,912 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 6V, 10V | 18mOhm @ 28A, 10V | 3.5V @ 35µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-262 |
2,088 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 57A TO-262 |
4,644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V AUTO |
3,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
7,866 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | 4500pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 25V 170A WDSON |
8,496 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2V @ 250µA | 82nC @ 10V | ±20V | 5852pF @ 12V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO262F |
8,262 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,390 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO262-3 |
4,356 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 887pF @ 75V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 8A 8-SOIC |
5,940 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 2V @ 250µA | 23nC @ 4.5V | ±12V | - | - | 1.31W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
6,156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | - | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | - | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
8,946 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 110A D2PAK |
3,996 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 47A DFN5X6 |
7,668 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 36A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.4V @ 250µA | 64nC @ 10V | ±20V | 2796pF @ 15V | Schottky Diode (Body) | 7.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-220 |
6,948 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 11A TO262 |
3,474 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 105A (Tc) | 7V, 10V | 7.2mOhm @ 20A, 10V | 3.7V @ 250µA | 81nC @ 10V | ±25V | 4870pF @ 40V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 7A 8SOIC |
2,898 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | ±20V | 1740pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 7A I2PAK |
6,768 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK |
4,500 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO263-3 |
2,358 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 11.8mOhm @ 70A, 10V | 2.4V @ 83µA | 80nC @ 10V | ±20V | 5550pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 100A TDSON-8 |
4,716 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.95mOhm @ 50A, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | ±12V | 13000pF @ 10V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
5,382 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
6,840 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 600V 0.16A TO92-3 |
3,420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
4,302 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 6.7mOhm @ 90A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4870pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
PSMN5R6-100YSF/SOT1023/4 LEADS |
2,916 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 17A DIRECTFET |
8,694 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta) | 10V | 4.9mOhm @ 43A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 2545pF @ 25V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M2 | DirectFET™ Isometric M2 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A TO-220AB |
3,078 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | - | 18mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |