Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 453/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V TO251 |
6,822 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 500V 3.9A TO-220F |
2,610 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 3.9A (Tc) | 10V | 2Ohm @ 1.95A, 10V | 5V @ 250µA | 12nC @ 10V | ±25V | 485pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V TO252 |
8,370 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 19A 8ULTRASO |
7,452 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 69A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.3V @ 250µA | 50.5nC @ 10V | ±20V | 3800pF @ 20V | - | 2.1W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | UltraSO-8™ | 3-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 60V 20A 93A 5DFN |
3,114 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 500V 4.2A TO-220F |
2,646 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.2A (Tc) | 10V | 1.75Ohm @ 2.1A, 10V | 5V @ 250µA | 12nC @ 10V | ±25V | 485pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 200V 3A TO252 |
5,184 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3A (Ta), 18A (Tc) | 5V, 10V | 105mOhm @ 18A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | 2065pF @ 100V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 78A SO8FL |
8,352 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.9A (Ta), 78A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 30nC @ 10V | ±20V | 1972pF @ 15V | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
4,122 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 60µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 7A TO251 |
3,924 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 516pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 30V 22.4A 8SOIC |
2,100 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 22.4A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.7V @ 1mA | 100nC @ 10V | ±20V | 4190pF @ 15V | - | 3W (Ta), 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 250V 0.26A DFN2020-6 |
5,508 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2.5V @ 1mA | 2.8nC @ 10V | ±40V | 81pF @ 25V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 70A TO251A |
7,506 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | 2.3V @ 250µA | 60nC @ 10V | ±20V | 3130pF @ 50V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-251A | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 9A TO220 |
5,814 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta), 55A (Tc) | 4.5V, 10V | 10.7mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 2007pF @ 30V | - | 2.1W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 35A TO220F |
3,042 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta), 35A (Tc) | 4.5V, 10V | 10.7mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 2007pF @ 30V | - | 2.1W (Ta), 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 30V 35.8A POWERDI506 |
2,664 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 35.8A (Ta) | 4.5V, 10V | 1.35mOhm @ 20A, 10V | 3V @ 250µA | 123nC @ 10V | ±20V | 7019pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAKSO-8 |
7,218 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150nC @ 10V | +20V, -16V | 7150pF @ 20V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
CONSUMER |
8,028 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO220 |
7,470 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 24.9W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
8,514 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
8,928 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
7,956 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
7,812 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET P-CH 100V 13A CPT3 |
8,784 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 4V, 10V | 200mOhm @ 6.5A, 10V | 2.5V @ 1mA | 40nC @ 10V | ±20V | 2400pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 22A CPT3 |
7,182 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 4V, 10V | 26mOhm @ 22A, 10V | 3V @ 1mA | 30nC @ 10V | ±20V | 1500pF @ 10V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SMALL SIGNAL+P-CH |
7,884 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T8 40V LOW COSS |
4,896 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 106A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 10V | ±20V | 1730pF @ 20V | - | 3W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-262 |
3,114 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 5.4A TO-220FP |
7,326 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 5.4A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO251 |
8,568 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 354pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |