Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SISC624P06X3MA1

SISC624P06X3MA1

For Reference Only

Part Number SISC624P06X3MA1
PNEDA Part # SISC624P06X3MA1
Description SMALL SIGNAL+P-CH
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISC624P06X3MA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSISC624P06X3MA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SISC624P06X3MA1 Datasheet
  • where to find SISC624P06X3MA1
  • Infineon Technologies

  • Infineon Technologies SISC624P06X3MA1
  • SISC624P06X3MA1 PDF Datasheet
  • SISC624P06X3MA1 Stock

  • SISC624P06X3MA1 Pinout
  • Datasheet SISC624P06X3MA1
  • SISC624P06X3MA1 Supplier

  • Infineon Technologies Distributor
  • SISC624P06X3MA1 Price
  • SISC624P06X3MA1 Distributor

SISC624P06X3MA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

NVD6824NLT4G-VF01

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3.468nF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 90W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDP032N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15160pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FCH25N60N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SupreMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

126mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3352pF @ 100V

FET Feature

-

Power Dissipation (Max)

216W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

FCH041N65F-F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

5V @ 7.6mA

Gate Charge (Qg) (Max) @ Vgs

294nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13020pF @ 100V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 Long Leads

Package / Case

TO-247-3

NVMFS6B03NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5320pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 198W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Recently Sold

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

TDA06H0SB1

TDA06H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

EN5319QI

EN5319QI

Intel

DC DC CONVERTER 0.6-5.05V

ACF321825-103-TD01

ACF321825-103-TD01

TDK

FILTER LC(T) SMD

ADE7754ARZRL

ADE7754ARZRL

Analog Devices

IC ENERGY METERING 3PHASE 24SOIC

MAX3232ESE+T

MAX3232ESE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

ISL6422BERZ-T

ISL6422BERZ-T

Renesas Electronics America Inc.

IC REG CONV SATELLIT 2OUT 40QFN

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

MB96F673ABPMC-GSE1

MB96F673ABPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 96KB FLASH 64LQFP

IRLML2402TRPBF

IRLML2402TRPBF

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23